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TK20J50D(F) - Toshiba

Description: Toshiba TK20J50D(F) N-channel MOSFET Transistor, 15 A, 500 V, 3-Pin TO-3PN

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TK20J50D(F) - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2-16C1B
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3D Models
TK20J50D(F) - Toshiba  - 3D model - Transistor Outline, Vertical - 2-16C1B
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TK20J50D(F) Details

  • Manufacturer Part Number:

    TK20J50D(F)

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-65, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5.95

  • Avalanche Energy Rating (Eas):

    470 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.27 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    11 pF

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    280 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK20J50D(F) Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to have a large copper area on the top and bottom layers, connected to the drain pin, to dissipate heat efficiently. Additionally, using thermal vias to connect the top and bottom layers can further improve heat dissipation.
  • To ensure the device is properly biased, make sure to follow the recommended biasing circuit in the datasheet. This typically involves using a voltage regulator to provide a stable voltage supply, and using resistors and capacitors to set the gate-source voltage and drain-source voltage within the recommended operating range.
  • To prevent damage, handle the device by the body or the pins, avoiding touching the die or the leads. Use an anti-static wrist strap or mat to prevent electrostatic discharge (ESD) damage. Store the device in an anti-static bag or tube to prevent damage during transportation and storage.
  • To determine the suitable heat sink for this device, consider the maximum power dissipation and the thermal resistance of the device. Choose a heat sink with a thermal resistance that is lower than the device's thermal resistance, and ensure the heat sink is properly mounted to the device using a thermal interface material.
  • The TK20J50D(F) meets the reliability and quality standards of Toshiba America Electronic Components, including ISO 9001 and IATF 16949. The device is also compliant with relevant industry standards, such as AEC-Q101 for automotive applications.

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TK20J50D(F) Overview

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Power Field-Effect Transistor, 20A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET