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TK20J60U(F) - Toshiba

Description: Toshiba TK20J60U(F) N-channel MOSFET Transistor, 15 A, 600 V, 3-Pin TO-3PN

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TK20J60U(F) - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2-16C1B
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TK20J60U(F) - Toshiba  - 3D model - Transistor Outline, Vertical - 2-16C1B
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TK20J60U(F) Details

  • Manufacturer Part Number:

    TK20J60U(F)

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SC-65, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    144 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    150 pF

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    190 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK20J60U(F) Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance would be to have a large copper area on the top and bottom layers connected to the drain pin, and to use thermal vias to dissipate heat to the bottom layer. Additionally, keeping the component placement and routing tight and symmetrical can help reduce thermal resistance.
  • To ensure proper biasing, make sure to follow the recommended voltage and current ratings in the datasheet. The device should be biased in the saturation region (Vgs > Vth) to achieve optimal performance. A gate resistor (Rg) should be used to limit the gate current and prevent oscillations.
  • To prevent damage, handle the device by the body or the pins, avoiding touching the die or the leads. Use an anti-static wrist strap or mat to prevent electrostatic discharge (ESD). Store the device in an anti-static bag or wrap it in anti-static material when not in use.
  • To determine the suitable heat sink, calculate the maximum power dissipation (Pd) based on the application's requirements. Then, use the thermal resistance (Rth) and maximum junction temperature (Tj) ratings in the datasheet to select a heat sink that can maintain the device's temperature within the recommended range.
  • When paralleling multiple devices, ensure that each device has its own gate resistor and that the gate signals are properly synchronized. Use a common source inductor or a current sense resistor to balance the current between devices. Also, consider the thermal management and ensure that each device has adequate cooling.

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TK20J60U(F) Overview

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