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TK2R9E10PL,S1X - Toshiba

Description: MOSFET Power MOSFET ID=240A VDSS=100V

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Symbol
TK2R9E10PL,S1X - Toshiba - PCB symbol
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PCB Footprints
TK2R9E10PL,S1X - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220
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3D Models
TK2R9E10PL,S1X - Toshiba - 3D model - Transistor Outline, Vertical - TO-220
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TK2R9E10PL,S1X Details

  • Manufacturer Part Number:

    TK2R9E10PL,S1X

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    278 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0041 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    65 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    306 W

  • Pulsed Drain Current-Max (IDM):

    500 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK2R9E10PL,S1X Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2oz copper thickness and a thermal relief pattern are also recommended.
  • Ensure that the device is operated within the recommended voltage and current ratings, and that the PCB is designed to minimize thermal resistance. Also, consider using a thermal interface material to improve heat transfer.
  • The device has built-in ESD protection, but it is still recommended to follow standard ESD handling procedures during assembly and testing. A minimum of 10kΩ resistance and 100pF capacitance are recommended for ESD protection.
  • Yes, the TK2R9E10PL,S1X is qualified for automotive and high-reliability applications. However, additional testing and validation may be required to meet specific industry standards.
  • The optimal gate resistor value depends on the specific application and switching frequency. A general guideline is to use a value between 10Ω and 100Ω, but simulation and testing may be required to determine the optimal value.

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TK2R9E10PL,S1X Overview

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