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TK31J60W - Toshiba

Description: N-ch MOSFET, 600 V, 0.088 Ω@10V, TO-3P(N), DTMOSⅣ

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TK31J60W - Toshiba - PCB symbol
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PCB Footprints
TK31J60W - Toshiba PCB footprint - Other - Other - 2-16C1S
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3D Models
TK31J60W - Toshiba - 3D model - Other - 2-16C1S
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TK31J60W Details

  • Manufacturer Part Number:

    TK31J60W

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    SC-65, TO-3P(N), 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    437 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    30.8 A

  • Drain-source On Resistance-Max:

    0.088 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    9.5 pF

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    230 W

  • Pulsed Drain Current-Max (IDM):

    123 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK31J60W Frequently Asked Questions (FAQs)

  • Toshiba provides a recommended PCB layout in the application note 'TK31J60W Series Power MOSFETs PCB Layout for Optimal Thermal Performance' (document number: TCAD0033). It's essential to follow this layout to ensure optimal thermal performance and to minimize thermal resistance.
  • The gate resistor value depends on the specific application requirements. A general guideline is to use a value between 10 ohms and 100 ohms. However, it's recommended to consult the application note 'Gate Resistance Selection for Power MOSFETs' (document number: TCAD0034) for more detailed guidance.
  • The maximum allowed voltage for the gate-source voltage (VGS) during switching is ±20V. Exceeding this voltage may cause damage to the device.
  • To ensure safe operation during overcurrent conditions, it's essential to implement overcurrent protection (OCP) and overtemperature protection (OTP) in the system design. The TK31J60W Operation and Protection Circuit Application Note (document number: TCAD0035) provides guidance on how to implement these protections.
  • The recommended storage temperature range for the TK31J60W is -40°C to 150°C. Storing the device outside this temperature range may affect its reliability and performance.

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TK31J60W Overview

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