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TK31V60W - Toshiba

Description: N-ch MOSFET, 600 V, 0.098 Ω@10V, DFN 8 x 8, DTMOSⅣ

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TK31V60W - Toshiba PCB footprint - Other - Other - 2-8T1A
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TK31V60W - Toshiba  - 3D model - Other - 2-8T1A
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TK31V60W Details

  • Manufacturer Part Number:

    TK31V60W

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DFN, 4 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6.65

  • Avalanche Energy Rating (Eas):

    338 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    30.8 A

  • Drain-source On Resistance-Max:

    0.098 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    9.5 pF

  • JESD-30 Code:

    S-PSSO-N4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    240 W

  • Pulsed Drain Current-Max (IDM):

    123 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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TK31V60W Overview

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Part Image IPL60R065C7 Infineon Technologies AG

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