TK31V60W5 footprint, schematic symbol and 3D model by Toshiba

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PCB Footprints

TK31V60W5 - Toshiba PCB footprint - Other - Other - DFN8x8

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Datasheet Download Datasheet
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Part Number TK31V60W5
Manufacturer Toshiba
Pin Count 5
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - DFN8x8
Released Date Sep 29, 2018
Last Modified Date Mar 7, 2023 4:10 PM UTC
Pinout / Pin List Click Here (Member Only)

TK31V60W5 Details

Manufacturer Part Number:
TK31V60W5
Rohs Code:
Yes
Part Life Cycle Code:
Active
Package Description:
DFN-4
ECCN Code:
EAR99
Manufacturer:
Toshiba America Electronic Components
YTEOL:
6
Avalanche Energy Rating (Eas):
338 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
600 V
Drain Current-Max (ID):
30.8 A
Drain-source On Resistance-Max:
0.109 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
9.5 pF
JESD-30 Code:
S-PSSO-N4
Number of Elements:
1
Number of Terminals:
4
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
SQUARE
Package Style:
SMALL OUTLINE
Polarity/Channel Type:
N-CHANNEL
Pulsed Drain Current-Max (IDM):
123 A
Surface Mount:
YES
Terminal Form:
NO LEAD
Terminal Position:
SINGLE
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

TK31V60W5 Frequently Asked Questions (FAQs)

Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
To ensure reliable operation in high-temperature environments, it's essential to follow the recommended derating curves, ensure proper heat sinking, and consider using a thermal interface material (TIM) to reduce thermal resistance.
Although not explicitly stated in the datasheet, Toshiba recommends limiting voltage transients to ±10% of the maximum rated voltage to prevent damage to the device.
Yes, the TK31V60W5 can be used in a parallel configuration to increase current capability. However, it's essential to ensure that the devices are properly matched, and the layout is designed to minimize current imbalance and thermal differences between devices.
Toshiba recommends a gate drive voltage of 10-15V and a current of 1-2A to ensure optimal switching performance and minimize switching losses.

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