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TK35N65W,S1F(S - Toshiba

Description: Toshiba TK35N65W,S1F(S N-channel MOSFET Transistor, 35 A, 650 V, 3-Pin TO-247

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TK35N65W,S1F(S - Toshiba PCB footprint - Other - Other - 2-16L1A
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TK35N65W,S1F(S - Toshiba  - 3D model - Other - 2-16L1A
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TK35N65W,S1F(S Details

  • Manufacturer Part Number:

    TK35N65W,S1F(S

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-65, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    614 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    35 A

  • Drain-source On Resistance-Max:

    0.08 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    9 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    270 W

  • Pulsed Drain Current-Max (IDM):

    140 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK35N65W,S1F(S Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a thermal pad on the bottom of the package, connected to a large copper area on the PCB. This helps to dissipate heat efficiently. Additionally, it's recommended to use vias to connect the thermal pad to the copper area to reduce thermal resistance.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions and derating guidelines provided in the datasheet. Additionally, consider using a heat sink or thermal interface material to reduce the junction temperature. It's also crucial to ensure good airflow around the device and to avoid overheating during soldering or rework processes.
  • The TK35N65W,S1F has an ESD rating of Human Body Model (HBM) ±2000V and Machine Model (MM) ±200V. To prevent ESD damage, handle the device with an anti-static wrist strap or mat, and ensure that the workspace is ESD-protected. Avoid touching the device's pins or exposed die, and use ESD-safe packaging and storage materials.
  • The TK35N65W,S1F is a commercial-grade device, but it can be used in high-reliability or automotive applications with proper qualification and testing. Toshiba provides a range of automotive-grade MOSFETs, such as the TK35N65W,S1F-A, which meet the requirements of the AEC-Q101 standard. However, it's essential to consult with Toshiba's technical support and follow their guidelines for using commercial-grade devices in high-reliability or automotive applications.
  • The gate resistor value depends on the specific application, PCB layout, and switching frequency. A general guideline is to use a gate resistor value between 10Ω to 100Ω. However, it's recommended to consult the datasheet and application notes for more detailed guidance on selecting the optimal gate resistor value. Additionally, consider using a gate driver IC to simplify the design and improve performance.

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