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TK35N65W,S1F - Toshiba

Description: N-Channel 650 V 35A (Ta) 270W (Tc) Through Hole TO-247

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TK35N65W,S1F - Toshiba PCB footprint - Other - Other - 2-16L1A
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TK35N65W,S1F - Toshiba  - 3D model - Other - 2-16L1A
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TK35N65W,S1F Details

  • Manufacturer Part Number:

    TK35N65W,S1F

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-65, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    614 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    35 A

  • Drain-source On Resistance-Max:

    0.08 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    9 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    270 W

  • Pulsed Drain Current-Max (IDM):

    140 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK35N65W,S1F Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended, and the copper area should be connected to a heat sink or a thermal interface material.
  • To ensure proper biasing during startup, Toshiba recommends using a soft-start circuit to slowly ramp up the gate voltage. This can be achieved using an external resistor-capacitor (RC) network or a dedicated soft-start IC.
  • Toshiba recommends limiting the voltage overshoot to less than 10% of the maximum rated voltage (650V) to prevent damage to the device. This can be achieved using a snubber circuit or a voltage clamp.
  • Toshiba recommends using an external overcurrent protection circuit, such as a current sense resistor and a comparator, to detect overcurrent conditions. Additionally, a thermistor or a temperature sensor can be used to monitor the device temperature and shut down the circuit if it exceeds the maximum rated temperature (150°C).
  • Toshiba recommends using a gate drive voltage of 10-15V and a current of 1-2A to ensure optimal switching performance. The gate drive circuit should be designed to provide a fast rise and fall time (less than 10ns) to minimize switching losses.

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TK35N65W,S1F Overview

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