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TK3A65D - Toshiba

Description: N-ch MOSFET, 650 V, 2.25 Ω@10V, TO-220SIS, π-MOSⅦ

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Symbol
TK3A65D - Toshiba - PCB symbol
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PCB Footprints
TK3A65D - Toshiba PCB footprint - Other - Other - TO220SIS-MOS-N
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3D Models
TK3A65D - Toshiba - 3D model - Other - TO220SIS-MOS-N
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TK3A65D Details

  • Manufacturer Part Number:

    TK3A65D

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-220AB

  • Package Description:

    SC-67, TO-220SIS, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6.2

  • Avalanche Energy Rating (Eas):

    234 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    2.25 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    35 W

  • Pulsed Drain Current-Max (IDM):

    12 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK3A65D Frequently Asked Questions (FAQs)

  • The recommended gate resistor value is typically between 10Ω to 100Ω, depending on the specific application and switching frequency.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.
  • The maximum allowed power dissipation (PD) is dependent on the ambient temperature (Ta) and the thermal resistance (RthJA). For the TK3A65D, the maximum PD is approximately 1.5W at Ta=25°C and RthJA=62.5°C/W.
  • Yes, the TK3A65D is suitable for high-frequency switching applications due to its low gate charge (Qg) and low output capacitance (Coss). However, ensure the gate driver is capable of providing a high current to quickly charge the gate capacitance.
  • Use a voltage clamp or a zener diode to protect the MOSFET from overvoltage. For overcurrent protection, consider using a current sense resistor and a comparator to detect excessive current.

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TK3A65D Overview

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