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TK3P50D - Toshiba

Description: N-ch MOSFET, 500 V, 3.0 Ω@10V, DPAK, π-MOSⅦ

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Symbol
TK3P50D - Toshiba - PCB symbol
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PCB Footprints
TK3P50D - Toshiba PCB footprint - Other - Other - 2-7K1S_2-7N1S
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TK3P50D - Toshiba - 3D model - Other - 2-7K1S_2-7N1S
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TK3P50D Details

  • Manufacturer Part Number:

    TK3P50D

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6.3

  • Avalanche Energy Rating (Eas):

    81 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1.5 pF

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    6 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK3P50D Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently.
  • Use a heat sink with a thermal interface material, ensure good airflow, and consider derating the device's power dissipation according to the temperature derating curve in the datasheet.
  • Although not specified in the datasheet, Toshiba recommends limiting voltage transients to ±10% of the rated voltage to prevent damage or malfunction.
  • Yes, but ensure the switching frequency is below 100 kHz to avoid excessive power losses and heat generation. Also, consider using a snubber circuit to reduce voltage spikes.
  • Use ESD protection devices, such as TVS diodes or ESD suppressors, on the input and output pins, and follow proper handling and storage procedures to prevent ESD damage.

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TK3P50D Overview

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