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TK3R1E04PL,S1X - Toshiba

Description: MOSFET N-Ch 40V 4670pF 63.4nC 128A 87W

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TK3R1E04PL,S1X - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220
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TK3R1E04PL,S1X - Toshiba  - 3D model - Transistor Outline, Vertical - TO-220
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TK3R1E04PL,S1X Details

  • Manufacturer Part Number:

    TK3R1E04PL,S1X

  • Pbfree Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    35 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0031 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    70 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    87 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK3R1E04PL,S1X Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended derating curves, ensure good thermal design, and consider using a heat sink or thermal interface material.
  • Although the datasheet doesn't specify a maximum allowed voltage for the input pins, it's generally recommended to limit the input voltage to 5.5V to prevent damage to the internal ESD protection diodes.
  • Yes, the TK3R1E04PL,S1X is suitable for high-frequency switching applications up to 1MHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's switching frequency is within the device's capabilities.
  • To prevent latch-up or damage, it's recommended to follow a controlled power-up sequence, ensuring that the input voltage (VIN) is applied before the enable signal (EN). A soft-start circuit or a power-up reset circuit can also be used to prevent damage.

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