Please enter a minimum 3 letters or numbers
Technical Content
Part Image

TK3R9E10PL,S1X - Toshiba

Description: Pb-F POWER MOSFET TRANSISTOR TO-220 PD=230W F=1MHZ

Download TK3R9E10PL,S1X Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
TK3R9E10PL,S1X - Toshiba - PCB symbol
click to zoom
PCB Footprints
TK3R9E10PL,S1X - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220
click to zoom
3D Models
TK3R9E10PL,S1X - Toshiba - 3D model - Transistor Outline, Vertical - TO-220
click to zoom

TK3R9E10PL,S1X Details

  • Manufacturer Part Number:

    TK3R9E10PL,S1X

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • Avalanche Energy Rating (Eas):

    131 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0058 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    45 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    230 W

  • Pulsed Drain Current-Max (IDM):

    500 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK3R9E10PL,S1X Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently.
  • Implement a heat sink or a thermal management system, and ensure the device is operated within the recommended temperature range (TJ = -40°C to 150°C).
  • The maximum allowed voltage for the bootstrap pin (VB) is VCC + 0.3V, but it's recommended to keep it within VCC to ensure reliable operation.
  • Yes, the TK3R9E10PL,S1X is suitable for high-frequency switching applications up to 100 kHz, but ensure proper PCB layout and decoupling to minimize EMI and noise.
  • Implement overcurrent protection (OCP) and overvoltage protection (OVP) circuits, and consider using a fuse or a PTC thermistor to prevent damage from excessive current or voltage.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

TK3R9E10PL,S1X Overview

Use the download button to access the TK3R9E10PL,S1X schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like TK3R9, or try a keyword search, such as Power Field-Effect Transistors

Parts related to TK3R9E10PL,S1X

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑