Please enter a minimum 3 letters or numbers
Technical Content
Part Image

TK4A80E,S4X - Toshiba

Description: Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=35W F=1MHZ

Download TK4A80E,S4X Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
TK4A80E,S4X - Toshiba - PCB symbol
click to zoom
PCB Footprints
TK4A80E,S4X - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2-10U1S_1
click to zoom
3D Models
TK4A80E,S4X - Toshiba - 3D model - Transistor Outline, Vertical - 2-10U1S_1
click to zoom

TK4A80E,S4X Details

  • Manufacturer Part Number:

    TK4A80E,S4X

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-220SIS, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    152 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    3.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    6 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    35 W

  • Pulsed Drain Current-Max (IDM):

    12 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK4A80E,S4X Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended derating curves, ensure proper heat sinking, and consider using a heat sink with a thermal interface material.
  • The maximum allowed voltage transient for the TK4A80E,S4X is ±20% of the rated voltage for a duration of ≤100ms. Exceeding this may cause damage to the device.
  • Yes, the TK4A80E,S4X can be used in switching regulator applications, but it's essential to ensure that the device is properly snubbed to prevent voltage spikes and ringing.
  • The recommended gate resistor value for the TK4A80E,S4X is between 10Ω to 100Ω, depending on the specific application and switching frequency.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

TK4A80E,S4X Overview

Use the download button to access the TK4A80E,S4X schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like TK4A8, or try a keyword search, such as Power Field-Effect Transistors

Parts related to TK4A80E,S4X

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑