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TK4Q60DA - Toshiba

Description: Power MOSFET (N-ch 500V<VDSS≤700V)

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PCB Footprints
TK4Q60DA - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2-7J2S4
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3D Models
TK4Q60DA - Toshiba  - 3D model - Transistor Outline, Vertical - 2-7J2S4
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TK4Q60DA Details

  • Manufacturer Part Number:

    TK4Q60DA

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    132 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    3.5 A

  • Drain-source On Resistance-Max:

    2.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3 pF

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    80 W

  • Pulsed Drain Current-Max (IDM):

    14 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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TK4Q60DA Overview

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