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TK4R1A10PL,S4X - Toshiba

Description: Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=54W F=1MHZ

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TK4R1A10PL,S4X - Toshiba - PCB symbol
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PCB Footprints
TK4R1A10PL,S4X - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220SIS-ren1
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3D Models
TK4R1A10PL,S4X - Toshiba - 3D model - Transistor Outline, Vertical - TO-220SIS-ren1
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TK4R1A10PL,S4X Details

  • Manufacturer Part Number:

    TK4R1A10PL,S4X

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220SIS, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    141 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    85 A

  • Drain-source On Resistance-Max:

    0.0059 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    45 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    54 W

  • Pulsed Drain Current-Max (IDM):

    500 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK4R1A10PL,S4X Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a solid ground plane and thermal vias under the package to ensure efficient heat dissipation. A minimum of 2oz copper thickness is recommended for the PCB.
  • To ensure reliable operation in high-temperature environments, it is recommended to derate the power dissipation according to the temperature derating curve provided in the datasheet. Additionally, ensure proper heat sinking and thermal management.
  • Toshiba recommends soldering conditions of 260°C peak temperature, 10-30 seconds dwell time, and 1-2°C/s ramp rate to prevent damage to the device.
  • Yes, the TK4R1A10PL,S4X is qualified for automotive and high-reliability applications. However, it is recommended to consult with Toshiba's application engineers to ensure the device meets the specific requirements of your application.
  • Toshiba recommends following standard ESD handling procedures, including the use of ESD-protective packaging, wrist straps, and mats. The device has an internal ESD protection diode, but external protection measures are still necessary to prevent damage.

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TK4R1A10PL,S4X Overview

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