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TK4R3E06PL,S1X - Toshiba

Description: MOSFET N-Ch 60V 3280pF 48.2nC 106A 87W

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TK4R3E06PL,S1X - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220
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TK4R3E06PL,S1X - Toshiba  - 3D model - Transistor Outline, Vertical - TO-220
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TK4R3E06PL,S1X Details

  • Manufacturer Part Number:

    TK4R3E06PL,S1X

  • Pbfree Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    29 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.0043 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    60 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    87 W

  • Pulsed Drain Current-Max (IDM):

    350 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK4R3E06PL,S1X Frequently Asked Questions (FAQs)

  • Toshiba recommends following the recommended PCB layout and thermal management guidelines provided in the application note or design guide for the TK4R3E06PL,S1X. This typically includes using a multi-layer PCB with a solid ground plane, placing the device near a heat sink or thermal pad, and ensuring good airflow around the component.
  • Consult the datasheet and application note for specific biasing and configuration recommendations. Additionally, Toshiba provides evaluation boards and design support tools to help engineers optimize their design and ensure proper configuration.
  • Toshiba provides reliability and quality metrics for the TK4R3E06PL,S1X in the datasheet and quality/reliability reports. The device meets industry standards such as AEC-Q101 and IEC 60747 for automotive and industrial applications, respectively.
  • The TK4R3E06PL,S1X is rated for operation up to 150°C. Derating factors for temperature, voltage, and current are provided in the datasheet. Engineers should consult the datasheet and application note for specific guidance on using the device in high-temperature environments.
  • Toshiba recommends following standard ESD and moisture-sensitive device handling procedures to prevent damage. Store the devices in their original packaging, away from direct sunlight and moisture, and handle them with anti-static wrist straps and mats.

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TK4R3E06PL,S1X Overview

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