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TK62N60X,S1F - Toshiba

Description: MOSFET DTMOSIV-High Speed 600V 40mOhmmax

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TK62N60X,S1F - Toshiba PCB footprint - Other - Other - 2-16L1A
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TK62N60X,S1F - Toshiba  - 3D model - Other - 2-16L1A
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TK62N60X,S1F Details

  • Manufacturer Part Number:

    TK62N60X,S1F

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-65, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6.22

  • Avalanche Energy Rating (Eas):

    698 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    61.8 A

  • Drain-source On Resistance-Max:

    0.04 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    400 W

  • Pulsed Drain Current-Max (IDM):

    247 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK62N60X,S1F Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the TK62N60X,S1F is -40°C to 150°C.
  • The recommended storage temperature range for the TK62N60X,S1F is -40°C to 30°C.
  • The maximum power dissipation for the TK62N60X,S1F is 125W.
  • The thermal resistance junction-to-case for the TK62N60X,S1F is 1.5°C/W.
  • Yes, the TK62N60X,S1F is RoHS compliant.

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Part Image TK62N60W Toshiba America Electronic Components

Power Field-Effect Transistor, 61.8A I(D), 600V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image TK62N60W5 Toshiba America Electronic Components

Power Field-Effect Transistor, 61.8A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image TK62N60X Toshiba America Electronic Components

Power Field-Effect Transistor, 61.8A I(D), 600V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247