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TK6A80E - Toshiba

Description: N-ch MOSFET, 800 V, 1.7 Ω@10V, TO-220SIS, π-MOSⅧ

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PCB Footprints
TK6A80E - Toshiba PCB footprint - Other - Other - TO220SIS-MOS-N
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TK6A80E - Toshiba  - 3D model - Other - TO220SIS-MOS-N
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TK6A80E Details

  • Manufacturer Part Number:

    TK6A80E

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    SC-67, TO-220SIS, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    308 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    1.7 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    45 W

  • Pulsed Drain Current-Max (IDM):

    18 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK6A80E Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal relief pattern under the package, and a minimum of 2oz copper thickness to ensure good heat dissipation. A heat sink or thermal pad can also be used to further improve thermal performance.
  • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal design and layout guidelines, and to derate the device's power dissipation according to the ambient temperature. Additionally, consider using a heat sink or thermal management system to keep the junction temperature within the recommended range.
  • Toshiba recommends soldering the TK6A80E using a reflow soldering process with a peak temperature of 260°C (500°F) and a dwell time of 30 seconds to 1 minute. Hand soldering is not recommended due to the device's high power density and thermal sensitivity.
  • Yes, the TK6A80E can be used in switching regulator applications, but it's essential to ensure that the device is operated within its recommended switching frequency range (typically up to 100 kHz) and that the output voltage is properly filtered to minimize ringing and overshoot.
  • To protect the TK6A80E from overvoltage and overcurrent conditions, it's recommended to use a voltage regulator or overvoltage protection circuit, and to add current limiting resistors or fuses in series with the device. Additionally, consider using a thermal protection circuit to prevent overheating.

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TK6A80E Overview

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