Part Image

TK7R4A10PL,S4X - Toshiba

Description: Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=42W F=1MHZ

Download TK7R4A10PL,S4X Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
TK7R4A10PL,S4X - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2-10U1S_2021
click to zoom
3D Models
TK7R4A10PL,S4X - Toshiba  - 3D model - Transistor Outline, Vertical - 2-10U1S_2021
click to zoom

TK7R4A10PL,S4X Details

  • Manufacturer Part Number:

    TK7R4A10PL,S4X

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220SIS, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    55 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.0074 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    25 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    54 W

  • Pulsed Drain Current-Max (IDM):

    270 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK7R4A10PL,S4X Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal design and layout guidelines, and to derate the device's power dissipation according to the ambient temperature. Additionally, consider using a heat sink or thermal interface material to improve heat dissipation.
  • Toshiba recommends soldering this device using a reflow soldering process with a peak temperature of 260°C (500°F) and a dwell time of 30 seconds. Hand soldering is not recommended due to the device's small size and high pin count.
  • To prevent ESD damage, handle the device by the body or pins, and avoid touching the die or internal components. Use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-protected environment. Follow proper ESD handling procedures during assembly and testing.
  • Store the device in a dry, cool place away from direct sunlight and moisture. Avoid exposing the device to extreme temperatures, humidity, or physical stress. Handle the device by the body or pins, and avoid bending or flexing the leads.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

TK7R4A10PL,S4X Overview

Use the download button to access the TK7R4A10PL,S4X schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like TK7R4, or try a keyword search, such as Power Field-Effect Transistors

Parts related to TK7R4A10PL,S4X

Showing 0 results