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TK8A50D - Toshiba

Description: N-ch MOSFET, 500 V, 0.85 Ω@10V, TO-220SIS, π-MOSⅦ

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PCB Footprints
TK8A50D - Toshiba PCB footprint - Other - Other - TO220SIS-MOS-N
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TK8A50D - Toshiba  - 3D model - Other - TO220SIS-MOS-N
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TK8A50D Details

  • Manufacturer Part Number:

    TK8A50D

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-67

  • Package Description:

    2-10U1B, SC-67, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    165 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.85 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    4 pF

  • JESD-30 Code:

    R-XSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    40 W

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK8A50D Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal relief pattern under the package, and a minimum of 2oz copper thickness to ensure good heat dissipation. Additionally, a thermal via array under the device can help to further reduce thermal resistance.
  • To ensure reliable operation at high temperatures, it's essential to follow proper thermal design and layout guidelines, and to derate the device's power dissipation according to the temperature derating curve provided in the datasheet. Additionally, consider using a heat sink or thermal interface material to improve heat dissipation.
  • While the datasheet specifies a maximum voltage rating of 50V, it's recommended to limit voltage transients to ±10% of the rated voltage to prevent damage to the device. Exceeding this limit may cause internal damage or affect the device's reliability.
  • Yes, the TK8A50D is suitable for high-frequency switching applications up to 100kHz. However, it's essential to consider the device's switching characteristics, such as turn-on and turn-off times, and to ensure that the gate drive circuitry is capable of providing a clean, high-frequency signal.
  • To protect the TK8A50D from ESD, follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Additionally, consider adding ESD protection devices, such as TVS diodes or ESD arrays, to the circuit design to prevent damage from static electricity.

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TK8A50D Overview

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