Part Image

TK9J90E - Toshiba

Description: Toshiba TK9J90E N-channel MOSFET Transistor, 9 A, 900 V, 3-Pin TO-3PN

Download TK9J90E Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
TK9J90E - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - SC-65
click to zoom
3D Models
TK9J90E - Toshiba  - 3D model - Transistor Outline, Vertical - SC-65
click to zoom

TK9J90E Details

  • Manufacturer Part Number:

    TK9J90E

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    SC-65, TO-3P(N), 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    454 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    900 V

  • Drain Current-Max (ID):

    9 A

  • Drain-source On Resistance-Max:

    1.3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15 pF

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    27 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK9J90E Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the TK9J90E is a standard SOT-223 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • To ensure proper thermal management, use a heat sink with a thermal resistance of ≤ 10°C/W, and apply a thermal interface material with a thermal conductivity of ≥ 5 W/m-K. Also, ensure good airflow around the device.
  • The maximum allowed voltage for the gate-source voltage (Vgs) is ±20V, but it's recommended to keep it within ±15V for reliable operation.
  • Yes, the TK9J90E is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout, decoupling, and gate drive design to minimize ringing and EMI.
  • Handle the device in an ESD-protected environment, use ESD-protective packaging, and ensure all equipment and personnel are grounded. Also, use ESD-protection devices, such as TVS diodes, in the circuit design.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

TK9J90E Overview

Use the download button to access the TK9J90E schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like TK9J9, or try a keyword search, such as Power Field-Effect Transistors

Parts related to TK9J90E

Showing 0 results