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TP86R203NL - Toshiba

Description: High-speed switching (2) Small gate charge: QSW = 4.3 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 7.0 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)

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TP86R203NL - Toshiba PCB footprint - Small Outline Packages - Small Outline Packages - SOP8
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TP86R203NL - Toshiba  - 3D model - Small Outline Packages - SOP8
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TP86R203NL Details

  • Manufacturer Part Number:

    TP86R203NL

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    46 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    19 A

  • Drain-source On Resistance-Max:

    0.0062 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    84 pF

  • JESD-30 Code:

    R-PDSO-G8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    109 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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