Part Image

TPH11006NL,LQ(S - Toshiba

Description: Toshiba TPH11006NL,LQ(S N-channel MOSFET, 40 A, 60 V U-MOSVIII-H, 8-Pin SOP

Download TPH11006NL,LQ(S Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
TPH11006NL,LQ(S - Toshiba PCB footprint - Other - Other - TPH11006NL,LQ(S-2
click to zoom
3D Models
TPH11006NL,LQ(S - Toshiba  - 3D model - Other - TPH11006NL,LQ(S-2
click to zoom

TPH11006NL,LQ(S Details

  • Manufacturer Part Number:

    TPH11006NL,LQ(S

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    33 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.017 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    50 pF

  • JESD-30 Code:

    S-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    34 W

  • Pulsed Drain Current-Max (IDM):

    81 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TPH11006NL,LQ(S Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or a heat sink to dissipate heat efficiently.
  • Monitor the device's voltage, current, and temperature to ensure they are within the specified limits. Use a thermal management system to prevent overheating, and implement overcurrent protection to prevent damage from excessive current.
  • A ceramic capacitor with a value of 10uF to 22uF is recommended for input decoupling. The capacitor should be placed as close to the device as possible to minimize noise and ensure stable operation.
  • Use a thermal imaging camera to identify hotspots, and check for signs of physical damage or contamination. Verify that the device is properly soldered and that the PCB layout is correct. Consult the datasheet and application notes for troubleshooting guidelines.
  • Yes, handle the device with an anti-static wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device's pins or exposed internal components to prevent damage from electrostatic discharge.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

TPH11006NL,LQ(S Overview

Use the download button to access the TPH11006NL,LQ(S schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like TPH11, or try a keyword search, such as Power Field-Effect Transistors

Parts related to TPH11006NL,LQ(S

Showing 0 results