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TPH1110FNH,L1Q - Toshiba

Description: MOSFET X35PBF Power MOSFET Transistr95ohm250V

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TPH1110FNH,L1Q - Toshiba PCB footprint - Other - Other - TPH1110FNH,L1Q-3
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TPH1110FNH,L1Q - Toshiba  - 3D model - Other - TPH1110FNH,L1Q-3
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TPH1110FNH,L1Q Details

  • Manufacturer Part Number:

    TPH1110FNH,L1Q

  • Pbfree Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5.97

  • Avalanche Energy Rating (Eas):

    58 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.112 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    50 pF

  • JESD-30 Code:

    S-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    57 W

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TPH1110FNH,L1Q Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to have a solid ground plane on the bottom layer, and to use thermal vias to connect the thermal pad to the ground plane. Additionally, it's recommended to have a large copper area on the top layer to dissipate heat.
  • To ensure the device is properly biased, make sure to follow the recommended voltage and current ratings specified in the datasheet. Additionally, ensure that the input and output capacitors are properly selected and placed close to the device to minimize parasitic inductance.
  • Exceeding the maximum junction temperature can lead to reduced device lifespan, decreased performance, and potentially even device failure. It's essential to ensure proper thermal management and heat dissipation to prevent overheating.
  • To troubleshoot issues with the device, start by checking the input voltage and current, as well as the output voltage and current. Verify that the device is properly biased and that the input and output capacitors are properly selected and placed. If the issue persists, consult the datasheet and application notes for guidance.
  • Yes, when designing with the TPH1110FNH,L1Q, it's essential to consider EMI/EMC guidelines to minimize electromagnetic interference. Ensure proper shielding, grounding, and decoupling to prevent electromagnetic radiation and interference.

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TPH1110FNH,L1Q Overview

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