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TPH1R104PB - Toshiba

Description: MOSFETs Silicon N-channel MOS (U-MOS -H)

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TPH1R104PB - Toshiba PCB footprint - Other - Other - SOP Advance(WF)
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TPH1R104PB - Toshiba  - 3D model - Other - SOP Advance(WF)
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TPH1R104PB Details

  • Manufacturer Part Number:

    TPH1R104PB

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    52 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    140 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.00196 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    320 pF

  • JESD-30 Code:

    S-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    132 W

  • Pulsed Drain Current-Max (IDM):

    360 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TPH1R104PB Frequently Asked Questions (FAQs)

  • The recommended land pattern for TPH1R104PB is a rectangular pad with a size of 2.5mm x 1.25mm, with a solder mask clearance of 0.1mm. It's also recommended to have a thermal via under the pad to improve heat dissipation.
  • Yes, TPH1R104PB is rated for operation up to 150°C, making it suitable for high-temperature applications. However, it's essential to ensure that the device is properly derated to prevent overheating and reduce the risk of thermal runaway.
  • To ensure the reliability of TPH1R104PB, it's essential to follow proper design and manufacturing guidelines, including using a robust PCB design, selecting high-quality components, and implementing adequate thermal management. Additionally, Toshiba recommends following their recommended soldering and assembly guidelines to prevent damage during manufacturing.
  • Yes, TPH1R104PB is suitable for high-frequency applications up to 100kHz. However, it's essential to consider the device's parasitic inductance and capacitance when designing the circuit, and to ensure that the layout is optimized for high-frequency operation.
  • Toshiba recommends storing TPH1R104PB in a dry, cool place with a temperature range of 5°C to 30°C and a relative humidity of 60% or less. It's also essential to store the devices in their original packaging or in a shielded bag to prevent electrostatic discharge damage.

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