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TPH1R306PL - Toshiba

Description: MOSFETs Silicon N-channel MOS (U-MOS -H)

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TPH1R306PL - Toshiba PCB footprint - Other - Other - SOP Advance_2
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3D Models
TPH1R306PL - Toshiba  - 3D model - Other - SOP Advance_2
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TPH1R306PL Details

  • Manufacturer Part Number:

    TPH1R306PL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    260 A

  • Drain-source On Resistance-Max:

    0.00134 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-F5

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TPH1R306PL Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • Toshiba recommends using a soldering iron with a temperature of 350°C (662°F) or less, and a soldering time of 3 seconds or less. A solder with a melting point of 220°C (428°F) or higher is recommended.
  • Although the datasheet specifies a maximum voltage of 30V, Toshiba recommends not exceeding 28V to ensure long-term reliability and to prevent damage from voltage spikes.
  • While the device is rated for operation up to 150°C (302°F), Toshiba recommends derating the power dissipation by 50% when operating above 125°C (257°F) to ensure long-term reliability.
  • Toshiba recommends using an ESD protection device, such as a TVS diode, with a voltage rating of 30V or higher, and a capacitance of 10nF or less, to prevent damage from electrostatic discharge.

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