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TPH1R712MD,L1Q - Toshiba

Description: MOSFET P-Channel Mosfet 20V UMOS-VI

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TPH1R712MD,L1Q - Toshiba PCB footprint - Other - Other - TPH1R712MD,L1Q-3
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TPH1R712MD,L1Q - Toshiba  - 3D model - Other - TPH1R712MD,L1Q-3
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TPH1R712MD,L1Q Details

  • Manufacturer Part Number:

    TPH1R712MD,L1Q

  • Pbfree Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    468 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.0027 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1550 pF

  • JESD-30 Code:

    S-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    78 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TPH1R712MD,L1Q Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to have a solid ground plane on the bottom layer, and to use thermal vias to connect the thermal pad to the ground plane. This helps to dissipate heat efficiently.
  • To ensure the device is properly biased, follow the recommended operating conditions and biasing circuits outlined in the datasheet. Additionally, ensure that the input and output capacitors are properly selected and placed close to the device to minimize parasitic inductance.
  • Exceeding the maximum junction temperature can lead to reduced device lifespan, increased thermal resistance, and potentially even device failure. It is essential to ensure that the device is operated within the recommended temperature range to maintain reliability and performance.
  • To protect the device from overvoltage and overcurrent conditions, consider using overvoltage protection (OVP) circuits and overcurrent protection (OCP) circuits. These can be implemented using external components such as zener diodes, resistors, and fuses.
  • To prevent damage, store the device in a cool, dry place away from direct sunlight and moisture. Handle the device by the body, avoiding touching the pins or leads to prevent electrostatic discharge (ESD) damage.

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