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TPH1R712MD - Toshiba

Description: P-ch MOSFET, -20 V, 0.0017 Ω@4.5V, SOP Advance, U-MOSⅥ

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TPH1R712MD - Toshiba  - 3D model
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TPH1R712MD Details

  • Manufacturer Part Number:

    TPH1R712MD

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    468 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.0027 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1550 pF

  • JESD-30 Code:

    S-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    78 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TPH1R712MD Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • The TPH1R712MD requires a bias voltage of 4.5V to 5.5V on the VCC pin, and a bias current of 10mA to 20mA on the VBIAS pin. Ensure the bias voltage and current are within the recommended range for optimal performance.
  • The maximum allowed power dissipation for the TPH1R712MD is 1.5W. Exceeding this limit may cause the device to overheat and potentially fail.
  • Toshiba recommends using ESD protection devices, such as TVS diodes or ESD protection ICs, on the input and output pins to prevent damage from electrostatic discharge.
  • The recommended operating temperature range for the TPH1R712MD is -40°C to 125°C. Operating the device outside this range may affect its performance and reliability.

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TPH1R712MD Overview

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