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TPH2010FNH,L1Q - Toshiba

Description: Pb-F POWER MOSFET TRANSISTOR SOP8-ADV MOQ=3000 PD=42W F=1MHZ

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PCB Footprints
TPH2010FNH,L1Q - Toshiba PCB footprint - Other - Other - SOP Advance-2021
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3D Models
TPH2010FNH,L1Q - Toshiba  - 3D model - Other - SOP Advance-2021
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TPH2010FNH,L1Q Details

  • Manufacturer Part Number:

    TPH2010FNH,L1Q

  • Pbfree Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    34 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    5.6 A

  • Drain-source On Resistance-Max:

    0.198 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    50 pF

  • JESD-30 Code:

    S-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Pulsed Drain Current-Max (IDM):

    19 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TPH2010FNH,L1Q Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended derating curves, ensure good thermal design, and consider using a heat sink or thermal interface material.
  • Although the datasheet doesn't specify a maximum allowed voltage, it's generally recommended to limit the input voltage to 1.5 times the maximum rated voltage to prevent damage from voltage spikes or transients.
  • Yes, the TPH2010FNH,L1Q is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's switching frequency is within the device's capabilities.
  • To prevent ESD damage, it's essential to follow proper ESD handling and assembly procedures, such as using ESD-safe materials, wrist straps, and mats. Additionally, consider using ESD protection devices, such as TVS diodes, in the circuit design.

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TPH2010FNH,L1Q Overview

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