Please enter a minimum 3 letters or numbers
Technical Content
Part Image

TPH2900ENH,L1Q - Toshiba

Description: Pb-F POWER MOSFET TRANSISTOR SOP-8-ADV MOQ=3000 PD=78W F=1MHZ

Download TPH2900ENH,L1Q Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
TPH2900ENH,L1Q - Toshiba - PCB symbol
click to zoom
PCB Footprints
TPH2900ENH,L1Q - Toshiba PCB footprint - Other - Other - TPH2900ENH,L1Q-6
click to zoom
3D Models
TPH2900ENH,L1Q - Toshiba - 3D model - Other - TPH2900ENH,L1Q-6
click to zoom

TPH2900ENH,L1Q Details

  • Manufacturer Part Number:

    TPH2900ENH,L1Q

  • Pbfree Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6.12

  • Avalanche Energy Rating (Eas):

    176 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    33 A

  • Drain-source On Resistance-Max:

    0.029 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    50 pF

  • JESD-30 Code:

    S-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    78 W

  • Pulsed Drain Current-Max (IDM):

    102 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TPH2900ENH,L1Q Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a heat sink or a thermal pad to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power dissipation at high temperatures.
  • Handle the device by the body, avoid touching the pins, and store it in an anti-static bag or wrap it in anti-static material. Avoid exposing it to moisture, extreme temperatures, or physical stress.
  • Yes, but ensure you follow the recommended operating conditions, and consider additional testing and validation for high-reliability or automotive applications.
  • Check the device's operating conditions, PCB layout, and thermal management. Use oscilloscopes or logic analyzers to debug the issue. Consult the datasheet and application notes for troubleshooting guidelines.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

TPH2900ENH,L1Q Overview

Use the download button to access the TPH2900ENH,L1Q schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like TPH29, or try a keyword search, such as Power Field-Effect Transistors

Parts related to TPH2900ENH,L1Q

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑