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TPH3R506PL,LQ - Toshiba

Description: MOSFET POWER MOSFET TRANSISTOR

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TPH3R506PL,LQ - Toshiba - PCB symbol
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PCB Footprints
TPH3R506PL,LQ - Toshiba PCB footprint - Other - Other - SOP Advance_2
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3D Models
TPH3R506PL,LQ - Toshiba - 3D model - Other - SOP Advance_2
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TPH3R506PL,LQ Details

  • Manufacturer Part Number:

    TPH3R506PL,LQ

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    48 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    94 A

  • Drain-source On Resistance-Max:

    0.0035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    95 pF

  • JESD-30 Code:

    S-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    116 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TPH3R506PL,LQ Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended derating curves, ensure good thermal design, and consider using a heat sink or thermal interface material.
  • The maximum allowed voltage for the TPH3R506PL,LQ is 30V, but it's recommended to operate within the specified voltage range (3.3V to 5.5V) for optimal performance and reliability.
  • While the TPH3R506PL,LQ is suitable for high-frequency switching applications, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's switching frequency is within the device's specified range.
  • Toshiba recommends following standard ESD handling procedures, such as using an ESD wrist strap or mat, and ensuring that the device is stored in an ESD-protected environment. Additionally, consider using ESD protection devices or circuits in the application.

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TPH3R506PL,LQ Overview

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