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TPH3R704PC,LQ - Toshiba

Description: Pb-F POWER MOSFET TRANSISTOR SOP-ADV PD=90W F=1MHZ

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PCB Footprints
TPH3R704PC,LQ - Toshiba PCB footprint - Other - Other - SOP Advance-2021
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3D Models
TPH3R704PC,LQ - Toshiba  - 3D model - Other - SOP Advance-2021
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TPH3R704PC,LQ Details

  • Manufacturer Part Number:

    TPH3R704PC,LQ

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    24 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    118 A

  • Drain-source On Resistance-Max:

    0.0058 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    115 pF

  • JESD-30 Code:

    S-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    90 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TPH3R704PC,LQ Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • Toshiba recommends using a soldering iron with a temperature of 350°C or less, and a soldering time of 3 seconds or less. A solder with a melting point of 220°C or higher is recommended.
  • Toshiba recommends that the input voltage deviation should be within ±10% of the nominal input voltage to ensure stable operation.
  • Toshiba recommends storing the device in a dry, clean environment with a temperature range of -40°C to 125°C. The device should be handled with care to avoid mechanical stress and electrostatic discharge.
  • Toshiba recommends using a ceramic capacitor with a value of 10uF to 22uF, and a voltage rating of 50V or higher, to ensure stable input voltage and reduce noise.

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