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TPH5900CNH,L1Q - Toshiba

Description: MOSFET UMOSVIII 150V 64mOhm (VGS=10V) SOP-ADV

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TPH5900CNH,L1Q - Toshiba PCB footprint - Other - Other - TPH5900CNH,L1Q-5
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TPH5900CNH,L1Q - Toshiba  - 3D model - Other - TPH5900CNH,L1Q-5
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TPH5900CNH,L1Q Details

  • Manufacturer Part Number:

    TPH5900CNH,L1Q

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    36 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    9 A

  • Drain-source On Resistance-Max:

    0.059 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    50 pF

  • JESD-30 Code:

    S-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Pulsed Drain Current-Max (IDM):

    35 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TPH5900CNH,L1Q Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the TPH5900CNH,L1Q is -40°C to 125°C.
  • To ensure reliability in high-temperature applications, it is recommended to follow proper thermal design and management practices, such as providing adequate heat sinking and airflow, and ensuring that the device is operated within its specified temperature range.
  • Key considerations for PCB layout and design when using the TPH5900CNH,L1Q include minimizing parasitic inductance and capacitance, using a solid ground plane, and ensuring adequate decoupling and bypassing.
  • To handle ESD protection when working with the TPH5900CNH,L1Q, it is recommended to follow proper ESD handling procedures, such as using an ESD wrist strap or mat, and ensuring that the device is stored in an ESD-protective package.
  • The TPH5900CNH,L1Q's power dissipation can have implications on the overall system design, including the need for adequate heat sinking, thermal management, and power supply design.

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TPH5900CNH,L1Q Overview

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