Please enter a minimum 3 letters or numbers
Technical Content
Part Image

TPN13008NH,L1Q - Toshiba

Description: MOSFET U-MOSVIII-H 80V 40A 18nC MOSFET

Download TPN13008NH,L1Q Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
TPN13008NH,L1Q - Toshiba - PCB symbol
click to zoom
PCB Footprints
TPN13008NH,L1Q - Toshiba PCB footprint - Other - Other - TPN13008NH,L1Q-3
click to zoom
3D Models
TPN13008NH,L1Q - Toshiba - 3D model - Other - TPN13008NH,L1Q-3
click to zoom

TPN13008NH,L1Q Details

  • Manufacturer Part Number:

    TPN13008NH,L1Q

  • Pbfree Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TSON-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    114 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.0133 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    50 pF

  • JESD-30 Code:

    S-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Pulsed Drain Current-Max (IDM):

    98 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TPN13008NH,L1Q Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to have a solid ground plane on the bottom layer, and to use thermal vias to connect the thermal pad to the ground plane. Additionally, it's recommended to have a minimum of 2oz copper thickness and to use a thermal relief pattern around the thermal pad.
  • To ensure proper soldering, it's recommended to use a soldering iron with a temperature range of 250-270°C, and to apply a small amount of solder paste to the pads. The device should be placed on a flat surface and the soldering iron should be applied to the pads for 2-3 seconds. It's also recommended to use a soldering flux to reduce oxidation.
  • The maximum allowed voltage on the input pins is 5.5V, exceeding this voltage may cause damage to the device.
  • To handle ESD protection, it's recommended to use an ESD wrist strap or mat when handling the device, and to store the device in an anti-static bag or container. Additionally, it's recommended to use ESD protection devices such as TVS diodes or ESD protection arrays on the input pins.
  • The recommended operating temperature range for this device is -40°C to 125°C. Operating the device outside of this range may affect its performance and reliability.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

TPN13008NH,L1Q Overview

Use the download button to access the TPN13008NH,L1Q schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like TPN13, or try a keyword search, such as Power Field-Effect Transistors

Parts related to TPN13008NH,L1Q

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑