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TPN2R703NL,L1Q - Toshiba

Description: MOSFET X35PBF Power MOSFET Trans VGS4.5VVDS30V

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TPN2R703NL,L1Q - Toshiba PCB footprint - Other - Other - TSON ADVANCE
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TPN2R703NL,L1Q - Toshiba  - 3D model - Other - TSON ADVANCE
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TPN2R703NL,L1Q Details

  • Manufacturer Part Number:

    TPN2R703NL,L1Q

  • Pbfree Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TSON-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    121 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    45 A

  • Drain-source On Resistance-Max:

    0.0041 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    120 pF

  • JESD-30 Code:

    S-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TPN2R703NL,L1Q Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to have a large copper area on the bottom layer connected to the thermal pad, and multiple vias to dissipate heat. Additionally, keeping the component away from other heat sources and using a thermal interface material can improve thermal performance.
  • To ensure the device is properly biased, follow the recommended operating conditions and biasing circuits outlined in the datasheet. Additionally, ensure that the input and output capacitors are properly selected and placed close to the device to minimize parasitic inductance.
  • Critical parameters to monitor during operation to prevent overheating include the device temperature, input voltage, output current, and power dissipation. Monitoring these parameters can help prevent overheating and ensure reliable operation.
  • Yes, to minimize EMI/EMC issues, ensure that the device is placed away from noise-sensitive components, and use proper shielding and filtering techniques. Additionally, follow the recommended PCB layout and grounding practices to minimize radiation and conduction of electromagnetic interference.
  • To prevent damage, store the device in a dry, cool place away from direct sunlight and moisture. Handle the device by the body, avoiding touching the pins or leads. Use anti-static wrist straps and mats when handling the device to prevent electrostatic discharge damage.

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TPN2R703NL,L1Q Overview

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