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TPN2R903PL,L1Q - Toshiba

Description: MOSFET Pb-F POWER MOSFET TRANSISTOR TSON-ADV PD=75W F=1MHZ

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TPN2R903PL,L1Q - Toshiba PCB footprint - Other - Other - TPN2R903PL,L1Q-2
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TPN2R903PL,L1Q - Toshiba  - 3D model - Other - TPN2R903PL,L1Q-2
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TPN2R903PL,L1Q Details

  • Manufacturer Part Number:

    TPN2R903PL,L1Q

  • Part Life Cycle Code:

    Active

  • Package Description:

    TSON-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    15 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    70 A

  • Drain-source On Resistance-Max:

    0.0029 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    115 pF

  • JESD-30 Code:

    S-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    75 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TPN2R903PL,L1Q Frequently Asked Questions (FAQs)

  • The recommended land pattern for the TPN2R903PL,L1Q can be found in the Toshiba datasheet or in the IPC-7351 standard. It is essential to follow the recommended land pattern to ensure reliable soldering and to prevent thermal and mechanical stress.
  • The TPN2R903PL,L1Q has a high power dissipation, so it's crucial to implement proper thermal management. This can be achieved by using a heat sink, thermal interface material, and ensuring good airflow around the device. The thermal resistance of the device should be considered when designing the thermal management system.
  • The TPN2R903PL,L1Q is a sensitive electronic component and requires proper handling to prevent damage. It's essential to handle the device by the body, avoid touching the pins, and use an anti-static wrist strap or mat to prevent electrostatic discharge.
  • The TPN2R903PL,L1Q is a commercial-grade device, and its reliability may not be suitable for high-reliability applications. Toshiba provides a range of high-reliability devices, such as the TX series, which are designed for high-reliability applications.
  • The reliability of the TPN2R903PL,L1Q can be determined by analyzing the device's failure rate, which is typically measured in FIT (failures in time). The FIT rate can be calculated using the device's MTBF (mean time between failures) and the operating conditions. Toshiba provides reliability data for the TPN2R903PL,L1Q in the datasheet or upon request.

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TPN2R903PL,L1Q Overview

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