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TPW1R306PL,L1Q - Toshiba

Description: MOSFET POWER MOSFET TRANSISTOR PD=170W

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TPW1R306PL,L1Q - Toshiba PCB footprint - Other - Other - SOP ADVANCE
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3D Models
TPW1R306PL,L1Q - Toshiba  - 3D model - Other - SOP ADVANCE
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TPW1R306PL,L1Q Details

  • Manufacturer Part Number:

    TPW1R306PL,L1Q

  • Pbfree Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

TPW1R306PL,L1Q Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to have a solid ground plane on the bottom layer, and to use thermal vias to connect the thermal pad to the ground plane. Additionally, it's recommended to have a large copper area on the top layer to dissipate heat.
  • To ensure proper soldering, use a soldering iron with a temperature of 250°C to 260°C, and apply a small amount of solder paste to the pads. Use a soldering technique that minimizes the time the iron is in contact with the device. Avoid applying excessive force or pressure, which can damage the device.
  • When handling the device, take precautions to prevent electrostatic discharge (ESD) damage. Use an ESD wrist strap or mat, and handle the device by the body or pins, not the leads. Avoid touching the device's electrical contacts or pins.
  • The correct input capacitance value depends on the specific application and operating frequency. As a general guideline, a capacitance value of 10uF to 22uF is recommended for most applications. However, it's recommended to consult the application notes and datasheet for specific guidance.
  • The device has a maximum junction temperature of 150°C. Ensure good airflow around the device, and consider using a heat sink if the device will be operating at high temperatures or high currents. Monitor the device's temperature and adjust the system design accordingly.

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