TRS10V65H - Toshiba
Description: 650 V/10 A SiC Schottky Barrier Diode, DFN8×8
Description: 650 V/10 A SiC Schottky Barrier Diode, DFN8×8
TRS10V65H
Yes
Active
EAR99
8541.10.00.80
Toshiba America Electronic Components
7
PD-CASE
GENERAL PURPOSE
CATHODE
SINGLE