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TRS12E65H,S1Q - Toshiba

Description: SiC Schottky Diodes G3 SiC-SBD 650V 12A TO-220-2L

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TRS12E65H,S1Q Details

  • Manufacturer Part Number:

    TRS12E65H,S1Q

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220, 2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Additional Feature:

    PD-CASE

  • Application:

    GENERAL PURPOSE

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.35 V

  • JEDEC-95 Code:

    TO-220AC

  • JESD-30 Code:

    R-PSFM-T2

  • Non-rep Pk Forward Current-Max:

    74 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Output Current-Max:

    33 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Power Dissipation-Max:

    107 W

  • Rep Pk Reverse Voltage-Max:

    650 V

  • Reverse Current-Max:

    120 µA

  • Reverse Test Voltage:

    650 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

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TRS12E65H,S1Q Overview

Use the download button to access the TRS12E65H,S1Q 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like TRS12, or try a keyword search, such as Rectifier Diodes

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