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TRS30N120HB - Toshiba

Description: 1200 V/30 A SiC Schottky Barrier Diode, TO-247, 1.4µA to 100µA, -55°C to 175°C

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PCB Footprints
TRS30N120HB - Toshiba PCB footprint - Other - Other - 2-16L1A_2025-3
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3D Models
TRS30N120HB - Toshiba  - 3D model - Other - 2-16L1A_2025-3
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TRS30N120HB Details

  • Manufacturer Part Number:

    TRS30N120HB

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Additional Feature:

    PD-CASE

  • Application:

    GENERAL PURPOSE

  • Case Connection:

    CATHODE

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.45 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Non-rep Pk Forward Current-Max:

    105 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Output Current-Max:

    41 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Power Dissipation-Max:

    394 W

  • Rep Pk Reverse Voltage-Max:

    1200 V

  • Reverse Current-Max:

    100 µA

  • Reverse Test Voltage:

    1200 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

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TRS30N120HB Overview

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