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TRS4E65F,S1Q - Toshiba

Description: Pb-F DIODE TO-220-2L V=650 IF=4A

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TRS4E65F,S1Q - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-2L
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TRS4E65F,S1Q - Toshiba  - 3D model - Transistor Outline, Vertical - TO-220-2L
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TRS4E65F,S1Q Details

  • Manufacturer Part Number:

    TRS4E65F,S1Q

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220, 2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5

  • Application:

    GENERAL PURPOSE

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.6 V

  • JEDEC-95 Code:

    TO-220AC

  • JESD-30 Code:

    R-PSFM-T2

  • Non-rep Pk Forward Current-Max:

    39 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Output Current-Max:

    4 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Rep Pk Reverse Voltage-Max:

    650 V

  • Reverse Current-Max:

    20 µA

  • Reverse Test Voltage:

    650 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

TRS4E65F,S1Q Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a ground plane or a dedicated heat sink.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating temperature range (−40°C to 125°C) and consider the device's power dissipation and thermal resistance. Implementing a heat sink or thermal management system can help maintain a safe operating temperature.
  • The TRS4E65F,S1Q has an ESD rating of Human Body Model (HBM) ≥ 2 kV and Machine Model (MM) ≥ 200 V. To prevent ESD damage, handle the device with an anti-static wrist strap, anti-static gloves, or an anti-static mat. Avoid touching the device's pins or exposed pads, and store the device in an anti-static bag or container.
  • The TRS4E65F,S1Q is an automotive-grade device, suitable for use in high-reliability and automotive applications. It meets the AEC-Q101 qualification standard and is designed to withstand the harsh conditions found in automotive environments.
  • Toshiba recommends a soldering profile with a peak temperature of 260°C (500°F) and a dwell time of 10-30 seconds. The device is compatible with lead-free soldering processes, and it's essential to follow the recommended soldering profile to prevent damage to the device.

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TRS4E65F,S1Q Overview

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