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TSM260P02CXRFG - Taiwan Semiconductor

Description: MOSFET -20V -6.5A Single P- Channel Power MOSFEt

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PCB Footprints
TSM260P02CXRFG - Taiwan Semiconductor PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23_2021-
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3D Models
TSM260P02CXRFG - Taiwan Semiconductor  - 3D model - SOT23 (3-Pin) - SOT-23_2021-
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TSM260P02CXRFG Details

  • Manufacturer Part Number:

    TSM260P02CXRFG

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Taiwan

  • ECCN Code:

    EAR99

  • Manufacturer:

    Taiwan Semiconductor

  • YTEOL:

    5.4

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    6.5 A

  • Drain-source On Resistance-Max:

    0.026 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    120 pF

  • JESD-30 Code:

    R-PDSO-G3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.56 W

  • Pulsed Drain Current-Max (IDM):

    26 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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TSM260P02CXRFG Overview

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