Part Image

TTD1409B,S4X - Toshiba

Description: Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=25W F=1MHZ

Download TTD1409B,S4X Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
TTD1409B,S4X - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220SIS-ren1
click to zoom
3D Models
TTD1409B,S4X - Toshiba  - 3D model - Transistor Outline, Vertical - TO-220SIS-ren1
click to zoom

TTD1409B,S4X Details

  • Manufacturer Part Number:

    TTD1409B,S4X

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-220SIS, 3 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    4

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    6 A

  • Collector-Base Capacitance-Max:

    35 pF

  • Collector-Emitter Voltage-Max:

    400 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    100

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation Ambient-Max:

    2 W

  • Power Dissipation-Max (Abs):

    25 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • VCEsat-Max:

    2 V

TTD1409B,S4X Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to have a large copper area on the bottom layer of the PCB, connected to the thermal pad of the TTD1409B. This will help to dissipate heat efficiently.
  • To ensure reliable operation in high-temperature environments, it is recommended to derate the power handling of the TTD1409B according to the temperature derating curve provided in the datasheet. Additionally, ensure good thermal design and heat sinking to keep the junction temperature within the recommended range.
  • The TTD1409B has an internal ESD protection diode, but it is still recommended to follow proper ESD handling procedures when handling the device. It is also recommended to add external ESD protection circuitry, such as a TVS diode, to protect the device from external ESD events.
  • Yes, the TTD1409B can be used in a switching regulator application. However, it is recommended to ensure that the device is operated within its recommended switching frequency range and that the PCB layout is designed to minimize electromagnetic interference (EMI).
  • When selecting input and output capacitors for the TTD1409B, consider the voltage rating, capacitance value, and equivalent series resistance (ESR) of the capacitors. The capacitors should be rated for the maximum input voltage and should have a low ESR to minimize voltage ripple and ensure stable operation.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

TTD1409B,S4X Overview

Use the download button to access the TTD1409B,S4X schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like TTD14, or try a keyword search, such as Power Bipolar Transistors

Parts related to TTD1409B,S4X

Showing 0 results