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TTD1509B - Toshiba

Description: NPN Bipolar Transistor, 80 V, 2 A, TO-126N

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PCB Footprints
TTD1509B - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-126N_2021
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3D Models
TTD1509B - Toshiba  - 3D model - Transistor Outline, Vertical - TO-126N_2021
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TTD1509B Details

  • Manufacturer Part Number:

    TTD1509B

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-126N, 3 PIN

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2016-02-24

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    3

  • Collector Current-Max (IC):

    2 A

  • Collector-Base Capacitance-Max:

    20 pF

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    2000

  • JEDEC-95 Code:

    TO-126

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation Ambient-Max:

    1.5 W

  • Power Dissipation-Max (Abs):

    10 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

  • VCEsat-Max:

    1.5 V

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TTD1509B Overview

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