TW027N65C - Toshiba
Description: N-ch SiC MOSFET, 650 V, 0.027 Ω(typ.)@18V, TO-247, 3rd Gen.
Description: N-ch SiC MOSFET, 650 V, 0.027 Ω(typ.)@18V, TO-247, 3rd Gen.
TW027N65C
Yes
Active
EAR99
24 Weeks
Toshiba America Electronic Components
5
DRAIN
SINGLE WITH BUILT-IN DIODE
650 V
58 A