TW027U65C - Toshiba
Description: N-ch SiC MOSFET, 650 V, 0.027 Ω(typ.)@18 V, TOLL, 3rd Gen.
Description: N-ch SiC MOSFET, 650 V, 0.027 Ω(typ.)@18 V, TOLL, 3rd Gen.
TW027U65C
Active
EAR99
Toshiba America Electronic Components
DRAIN
SINGLE WITH BUILT-IN DIODE
650 V
57 A
0.04 Ω
METAL-OXIDE SEMICONDUCTOR
6.6 pF