TW031V65C - Toshiba
Description: N-ch SiC MOSFET, 650 V, 0.031 Ω(typ.)@18 V, DFN 8×8, 3rd Gen.
Description: N-ch SiC MOSFET, 650 V, 0.031 Ω(typ.)@18 V, DFN 8×8, 3rd Gen.
TW031V65C
Active
DFN-4
8542.39.00.60
Toshiba America Electronic Components
5
SEATED HGT-NOM
PLL FREQUENCY SYNTHESIZER
R-XDSO-N13
20.32 mm
1