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TW031V65C - Toshiba

Description: N-ch SiC MOSFET, 650 V, 0.031 Ω(typ.)@18 V, DFN 8×8, 3rd Gen.

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PCB Footprints
TW031V65C - Toshiba PCB footprint - Other - Other - 2-8T1A
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3D Models
TW031V65C - Toshiba  - 3D model - Other - 2-8T1A
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TW031V65C Details

  • Manufacturer Part Number:

    TW031V65C

  • Part Life Cycle Code:

    Active

  • Package Description:

    DFN-4

  • HTS Code:

    8542.39.00.60

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5

  • Additional Feature:

    SEATED HGT-NOM

  • Analog IC - Other Type:

    PLL FREQUENCY SYNTHESIZER

  • JESD-30 Code:

    R-XDSO-N13

  • Length:

    20.32 mm

  • Number of Functions:

    1

  • Number of Terminals:

    13

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Code:

    SON

  • Package Equivalence Code:

    DILCC13/14,.5

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Seated Height-Max:

    5.1 mm

  • Supply Current-Max (Isup):

    180 mA

  • Supply Voltage-Max (Vsup):

    3.46 V

  • Supply Voltage-Min (Vsup):

    3.13 V

  • Supply Voltage-Nom (Vsup):

    3.3 V

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Pitch:

    2.54 mm

  • Terminal Position:

    DUAL

  • Width:

    13.72 mm

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TW031V65C Overview

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