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TW048N65C - Toshiba

Description: N-ch SiC MOSFET, 650 V, 0.048 Ω(typ.)@18V, TO-247, 3rd Gen.

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PCB Footprints
TW048N65C - Toshiba PCB footprint - Other - Other - 2-16L1A
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TW048N65C - Toshiba  - 3D model - Other - 2-16L1A
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TW048N65C Details

  • Manufacturer Part Number:

    TW048N65C

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    4.4 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    132 W

  • Pulsed Drain Current-Max (IDM):

    103 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

TW048N65C Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves, ensure proper heat sinking, and avoid exceeding the maximum junction temperature (Tj) of 175°C.
  • The TW048N65C has an integrated ESD protection diode, but it's still recommended to follow standard ESD handling procedures during assembly and testing. A human body model (HBM) of ±2kV and a machine model (MM) of ±200V are recommended.
  • Yes, the TW048N65C is qualified for automotive and high-reliability applications. However, it's essential to follow the recommended qualification process, including AEC-Q101 and PPAP compliance, and to consult with Toshiba's technical support team for specific requirements.
  • Toshiba recommends a peak reflow temperature of 260°C, with a soldering time of 10-30 seconds. A nitrogen atmosphere is recommended to minimize oxidation. Consult the datasheet for detailed soldering profile guidelines.

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