TW054V65C - Toshiba
Description: N-ch SiC MOSFET, 650 V, 0.054 Ω(typ.)@18 V, DFN 8×8, 3rd Gen.
Description: N-ch SiC MOSFET, 650 V, 0.054 Ω(typ.)@18 V, DFN 8×8, 3rd Gen.
TW054V65C
Active
DFN-4
EAR99
Toshiba America Electronic Components
DRAIN
SINGLE WITH BUILT-IN DIODE
650 V
36 A
0.081 Ω
METAL-OXIDE SEMICONDUCTOR