TW060N120C - Toshiba
Description: N-ch SiC MOSFET, 1200 V, 0.060 Ω(typ.)@18V, TO-247, 3rd Gen.
Description: N-ch SiC MOSFET, 1200 V, 0.060 Ω(typ.)@18V, TO-247, 3rd Gen.
TW060N120C
Yes
Active
EAR99
24 Weeks
Toshiba America Electronic Components
6
DRAIN
SINGLE WITH BUILT-IN DIODE
1200 V
36 A